In situ magnetoresistance measurements during patterning of spin valve devices
نویسندگان
چکیده
منابع مشابه
Electrically programmable magnetoresistance in multifunctional organic-based spin valve devices.
Information and communication technology (ICT) is now calling for solutions enabling lower power consumption, further miniaturization, and multifunctionality requiring the development of new device concepts and new materials. [ 1 ] One of the most fertile approaches to meet such demands is spintronics, which is now facing the challenge of evolving from the fi rst generation of devices that led ...
متن کاملElectrically controllable magnetoresistance switching in multifunctional organic based spin-valve devices
LSMO Low Resistance High resistance The Fig.4a shows the spin valve presented previously in Fig.1 before any higher voltage was applied this corresponds to the lowest resistance state and a SVMR of 22%. Next, we apply a voltage bias of -1.5 V and the device resistance increases from 362 kOhms to 4.3 MOhms. The voltage is subsequently reduced back to the measuring value of -0.1 V and the magneto...
متن کاملSpin-valve-like magnetoresistance in Mn2NiGa at room temperature.
Spin valves have revolutionized the field of magnetic recording and memory devices. Spin valves are generally realized in thin film heterostructures, where two ferromagnetic (FM) layers are separated by a nonmagnetic conducting layer. Here, we demonstrate spin-valve-like magnetoresistance at room temperature in a bulk ferrimagnetic material that exhibits a magnetic shape memory effect. The orig...
متن کاملObserving the spin Coulomb drag in spin-valve devices
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spindrag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomp...
متن کاملSpin-dependent Seebeck effect in non-local spin valve devices
Mikhail Erekhinsky, Fèlix Casanova, Ivan K. Schuller, and Amos Sharoni Department of Physics, Center for Advanced Nanoscience, University of California, San Diego, La Jolla, California 92093, USA CIC NanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain Department of Physics, Institute of Nanotechnology and A...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2002
ISSN: 0021-8979
DOI: 10.1063/1.1451889